Crisis Management for a Conflict with North Korea

Semiconductor Digest | English | AcademicThink | Dec. 5, 2025 | UndeterminedBizdev-Partnering

onsemi and Innoscience have signed a memorandum of understanding (MoU) to collaborate on accelerating the deployment of gallium nitride (GaN) power devices in the 40-200V range. The partnership aims to combine onsemi’s expertise in integrated systems and packaging with Innoscience’s GaN technology and high-volume manufacturing to provide cost-effective, efficient GaN products for industrial, automotive, telecom infrastructure, consumer, and AI data center markets.

GaN devices offer advantages such as higher switching speeds, smaller size, and lower energy losses, but adoption in low and medium-voltage sectors has been limited by supply and manufacturing constraints. The collaboration seeks to overcome these challenges to enable global high-volume production and broaden customer adoption across multiple market segments, including motor drives, DC-DC converters, power supplies, and battery backup units.

For onsemi customers, the partnership promises faster time to market through rapid prototyping and accelerated design-in, scalable manufacturing to support large-volume production, and lower overall system costs with optimized packaging and simplified thermal management. The collaboration leverages Innoscience’s established GaN capacity alongside onsemi’s global integration capabilities.

GaN is expected to capture an 11% share of the global power semiconductor market by 2030, with a compound annual growth rate of 42% from 2024 to 2030. This initiative complements onsemi’s existing power portfolio, which includes silicon and silicon carbide technologies, positioning the company as a leading provider of integrated power systems to support the rising global demand for electrification and AI-driven energy solutions.